 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAGZ52F120A MSAHZ52F120A 1200 Volts 52 Amps 3.2 Volts vce(sat) N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features * * * * * * * * Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAH(G)Z52F120B high frequency IGBT, low switching losses anti-parallel FREDiode (MSAHZ52F120A only) Maximum Ratings @ 25C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ 25C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90) EAS IC(sc) IC(sc)RBSOA PD Tj Tstg IS ISM JC MAX. 1200 1200 +/-20 +/-30 52 33 104 66 65 260 66 300 -55 to +150 -55 to +150 50 100 0.4 COLLECTOR UNIT Volts Volts Volts Volts Amps Amps mJ A A Watts C C Amps Amps C/W Collector-to-Gate Breakdown Voltage @ TJ 25C, RGS= 1 M Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Continuous Collector Current Tj= 25C Tj= 90C Peak Collector Current (pulse width limited by Tjmax,) 90C Tj= 25C Tj= Avalanche energy (single pulse) @ IC= 25A, VCC= 50V, L= 200H, Short circuit current (SOA) , Short circuit (reverse) current (RBSOA) , VCE 1200V, TJ= 150C Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode, MSAHZ52F120A only) Pulse Source Current (Body Diode, MSAHZ52F120A only) Thermal Resistance, Junction to Case RG= 25, Tj= 25C VCE 1200V, TJ= 150C, tsc 10s Mechanical Outline EMITTER (MS...A) GATE (MS...B) Datasheet# MSC0295A MSAGZ52F120A MSAHZ52F120A Electrical Parameters @ 25C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) Gate Threshold Voltage Gate-to-Emitter Leakage Current Collector-to-Emitter Leakage Current (Zero Gate Voltage Collector Current) Collector-to-Emitter Saturation Voltage (1) SYMBOL BVCES VGE(th) IGES ICES VCE(sat) CONDITIONS VGS = 0 V, I C = 250 A VCE = VGE, IC = 350 A VGE = 20VDC, VCE = 0 VCE =0.8*BVCES VGE = 0 V VGE= 15V, I C= 25A I C= 25A I C= 60A I C= 30A VCE = 20 V; I C = 25 A MIN 1200 4.5 TYP. 5.5 MAX 6.5 100 200 250 1000 3.2 3.9 UNIT V V nA A V T J = 25C T J = 125C TJ = 25C T J = 125C T J = 25C T J = 125C T J = 25C T J = 125C 8.5 Forward Transconductance (1) Input Capacitance Output Capacitance Reverse Transfer Capacitance INDUCTIVE LOAD, Tj= 125C Turn-on Delay Time Rise Time On Energy Turn-off Delay Time Fall Time Off Energy INDUCTIVE LOAD, Tj= 125C Turn-on Delay Time Rise Time On Energy Turn-off Delay Time Fall Time Off Energy Total Gate Charge Gate-to-Emitter Charge Gate-to-Collector (Miller) Charge Antiparallel diode forward voltage (MSAHZ52F120A only) Antiparallel diode reverse recovery time (MSAHZ52F120A only) Antiparallel diode reverse recovery charge (MSAHZ52F120A only) Antiparallel diode peak recovery current (MSAHZ52F120A only) gfs Cies Coes Cres td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Qg Qge Qgc VF trr Qrr IRM 2.7 3.3 3.4 4.3 20 1650 250 110 75 65 3.6 420 45 2.4 95 90 10 420 45 4.2 160 20 75 2.4 2 60 S 2200 380 160 110 100 560 60 pF VGE = 0 V, V CE = 25 V, f = 1 MHz VGE = 15 V, V CE = 600 V, IC = 25 A, R G = 47 , L= 100 H note 2, 3 ns ns mJ ns ns mJ ns ns mJ ns ns mJ nC VGE = 15 V, V CE = 600 V, IC = 50 A, R G = 47 , L= 100 H note 2, 3 VGE = 15 V, V CE = 600V, I C = 25A T J = 25 C T J = 100 C dIE/dt= 100 A/us, T J= 25C dIE/dt= 800 A/us, T J= 125C dIE/dt= 100 A/us, T J= 25C dIE/dt= 800 A/us, T J= 125C dIE/dt= 100 A/us, T J= 25C dIE/dt= 800 A/us, T J= 125C IE= 10 A IE= 10 A IE= 10 A, IE= 10 A, IE= 10 A, IE= 10 A, IE= 10 A, IE= 10 A, 3 TBD TBD 800 TBD 22 V V ns ns nC nC A A Notes (1) (2) (3) (4) Pulse test, t 300 s, duty cycle 2% switching times and losses may increase for larger V CE and/or R G values or higher junction temperatures. switching losses include "tail" losses Microsemi Corp. does not manufacture the igbt die; contact company for details. |
Price & Availability of MSAGZ52F120A
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |